Boron-implanted profiles in diamond
- 1 January 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (1) , 7-8
- https://doi.org/10.1063/1.88573
Abstract
Boron ions with energy ranging from 40 to 250 kev have been implanted at room temperature in type‐IIa diamonds with doses of 1015 and 1016 cm−2. The boron profiles have been measured using an ion analyzer. These profiles are compared with profiles calculated using Winterbon’s theory. Reasonable agreement between experimental and theoretical profiles is obtained for the electronic stopping cross section measured by Omrod et al. up to about 180 keV.Keywords
This publication has 10 references indexed in Scilit:
- Study of Defects Introduced by Ion Implantation in DiamondJapanese Journal of Applied Physics, 1975
- EPR measurements in ion-implanted diamondPhysica Status Solidi (a), 1974
- A note on the large-depth decrease of range and damage profilesRadiation Effects, 1972
- Properties of proton-irradiated diamondRadiation Effects, 1972
- Analyses de couches minces de silice par emission ionique secondaireMaterials Research Bulletin, 1971
- Analysis of ion implanted diamondRadiation Effects, 1971
- USE OF CHARACTERISTIC X RAYS TO MONITOR ANNEALING OF ION-IMPLANTED DIAMONDApplied Physics Letters, 1969
- SOME LOW-ENERGY ATOMIC STOPPING CROSS SECTIONSCanadian Journal of Physics, 1965
- STOPPING CROSS SECTIONS IN CARBON FOR LOW-ENERGY ATOMS WITHCanadian Journal of Physics, 1963
- Energy Dissipation by Ions in the kev RegionPhysical Review B, 1961