Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation
- 15 June 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (12) , 7608-7612
- https://doi.org/10.1063/1.367876
Abstract
A strained pseudomorphic Si0.7Ge0.3 film grown by gas-source molecular-beam epitaxy on Si(001) was irradiated at room temperature with 25 keV Ga+ ions. The gradual strain relaxation of the metastable Si0.7Ge0.3 film was monitored using in situ x-ray diffraction as a function of dose. Based on a dimensional argument, the ion-induced damage scales as extended defects. The Hendricks-Teller model was successfully applied to explain the shifting and broadening of the additional diffuse scattering.This publication has 35 references indexed in Scilit:
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