Linear electro-optic effects in zinc blende semiconductors
- 15 December 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (12) , 4666-4669
- https://doi.org/10.1063/1.336240
Abstract
Linear electro-optic effects in zincblende semiconductors are theoretically analyzed by means of a microscopic simple model without any fitting of parameters. Faust–Henry, second harmonic generation, and linear electro-optic coefficients are obtained from the calculation of the derivatives of the susceptibility with respect to electric fields and ionic displacements. Our results for GaP, GaAs, InP, ZnSe, and ZnTe are in satisfactory agreement with the available experimental information.This publication has 15 references indexed in Scilit:
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