MOS WEAROUT AND BREAKDOWN STATISTICS
- 1 January 1980
- book chapter
- Published by Elsevier
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- H-MOS reliabilityIEEE Transactions on Electron Devices, 1979
- 2.8 A statistical approach to the analysis of dielectric breakdown strength of thin insulating filmsVacuum, 1977
- Characterization of thin oxide films for FET applicationsJournal of Solid State Chemistry, 1975
- Improved Dielectric Reliability of SiO2 Films with Polycrystalline Silicon ElectrodesJournal of the Electrochemical Society, 1975
- A Method for the Determination of High-Field Conduction Laws in Insulating Films in the Presence of Charge TrappingJournal of Applied Physics, 1972
- Dielectric Breakdown in Silicon Dioxide Films on SiliconJournal of the Electrochemical Society, 1972
- Dielectric Breakdown in Silicon Dioxide Films on SiliconJournal of the Electrochemical Society, 1972