Microwave Plasma CVD System to Fabricate α-Si Thin Films out of Plasma
- 1 January 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (1A) , L40
- https://doi.org/10.1143/jjap.22.l40
Abstract
This study has been concerned with the development of a system to fabricate thin films by a microwave plasma chemical vapour deposition method while keeping the substrate out of the discharge plasma. Si thin films are fabricated in a deposition region using an improved coaxial line type microwave CW discharge tube without a silicon deposition on the discharge tube wall. A very uniform Si thin film has been fabricated over a circle with a 10 cm diameter and the deposition rates are 50 to 400 Å/min. The structure of the fabricated films is amorphous and the optical band gap is 1.8 to 2.0 eV.Keywords
This publication has 4 references indexed in Scilit:
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- Radial distribution of excited atoms in a new coaxial line type microwave cw discharge tubeJournal of Applied Physics, 1980
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