DEFECTS IN SEMICONDUCTORS INVESTIGATED BY POSITRON ANNIHILATION
- 1 January 1990
- book chapter
- Published by Elsevier
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- On the character of defects in GaAsJournal of Physics: Condensed Matter, 1989
- Interaction of positron beams with surfaces, thin films, and interfacesReviews of Modern Physics, 1988
- Electronic structure and positron states at vacancies in Si and GaAsPhysical Review B, 1986
- Monovacancy Formation Enthalpy in SiliconPhysical Review Letters, 1986
- A positron study of plastic deformation of siliconCanadian Journal of Physics, 1983
- A study of defects in amorphous silicon filmsJournal of Applied Physics, 1983
- Annihilation of Positrons in Electron‐Irradiated Silicon CrystalsPhysica Status Solidi (b), 1978
- Influence of defects and temperature on the annihilation of positrons in neutron-irradiated siliconPhysical Review B, 1976
- EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexesPhysical Review B, 1976
- New Oxygen Infrared Bands in Annealed Irradiated SiliconPhysical Review B, 1964