Low-threshold laser diodes based on type-II GaInAsSb/GaSbquantum-wells operating at 2.36 µm at room temperature
- 21 November 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (24) , 2279-2280
- https://doi.org/10.1049/el:19961496
Abstract
Laser diodes emitting at 2.36 µm at room temperature have been fabricated from a type-Il quantum-well heterostructure with an active region consisting of five Ga0.65In0.35As0.15Sb0.85 wells and GaSb barriers. A pulsed threshold current density of 305 A/cm2 has been obtained for an 820 µm-long-device at 23°C. The characteristic temperature T0 was found to be 55 K between –30 and 50°C, the differential quantum efficiency being 35% for 600 µm long lasers.Keywords
This publication has 8 references indexed in Scilit:
- Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxySemiconductor Science and Technology, 1996
- Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μmApplied Physics Letters, 1996
- Mechanism of suppression of Auger recombination processes in type-II heterostructuresApplied Physics Letters, 1995
- Room-temperature 2.78 μm AlGaAsSb/InGaAsSb quantum-well lasersApplied Physics Letters, 1995
- High-power, high-temperature operation of GaInAsSb-AlGaAsSb ridge-waveguide lasers emitting at 1.9 μmIEEE Photonics Technology Letters, 1995
- High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 /spl mu/mIEEE Photonics Technology Letters, 1994
- High-power multiple-quantum-well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current densityApplied Physics Letters, 1992
- Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxyApplied Physics Letters, 1991