High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 /spl mu/m
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (1) , 7-9
- https://doi.org/10.1109/68.265873
Abstract
High-power diode lasers emitting at /spl sim/1.9 μm have been fabricated from a quantum-well heterostructure having an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers. For devices 300 μm wide and 1000 μm long, single-ended output power as high as 1.3 W cw has been obtained with an initial differential quantum efficiency of 47%. The pulsed threshold current density is as low as 143 A/cm 2 for 2000-μm-long devices.Keywords
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