Growth of Single Crystal type A and type B CoxNi1-xSi2 Layers on Si(111)
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Schottky-barrier heights of single-crystalon Si(111): The effect of a surfacep-njunctionPhysical Review B, 1986
- Growth of strained-layer semiconductor-metal-semiconductor heterostructuresApplied Physics Letters, 1986
- Surface structure of epitaxialcrystals grown on Si(111)Physical Review B, 1986
- Control of a natural permeable CoSi2 base transistorApplied Physics Letters, 1986
- The formation of disilicides from bilayers of Ni/Co and Co/Ni on silicon: Phase separation and solid solutionThin Solid Films, 1986
- Reaction of silicon with films of CoNi alloys: Phase separation of the monosilicides and nucleation of the disilicidesThin Solid Films, 1985
- Electrical transport properties of CoSi2 and NiSi2 thin filmsApplied Physics Letters, 1984
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983