Control of a natural permeable CoSi2 base transistor
- 10 March 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (10) , 635-637
- https://doi.org/10.1063/1.96728
Abstract
We report results on the fabrication of a natural permeable base transistor in a Si/CoSi2/Si heterostructure using molecular beam epitaxy (MBE). No photolithography is required, the transistor action being controlled by MBE growth conditions through the density and size of natural openings in the silicide base. The electrical characteristics of devices processed from such heterostructures are intimately related to the presence of these openings. Common base current gains in the range 0.01–0.95 have been observed and correlated with the size and density of the openings.Keywords
This publication has 9 references indexed in Scilit:
- Realization and electrical properties of a monolithic metal-base transistor : The Si/CoSi2/Si structurePhysica B+C, 1985
- Transistor action in Si/CoSi2/Si heterostructuresApplied Physics Letters, 1985
- Transistor effect in monolithic Si/CoSi 2 /Si epitaxial structuresElectronics Letters, 1984
- Structural characterization by transmission electron microscopy of silicon grown over submicrometer-period gratings of deposited tungstenApplied Physics Letters, 1984
- Growth of single-crystal CoSi2 on Si(111)Applied Physics Letters, 1982
- Silicon/metal silicide heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1980
- Double heteroepitaxy in the Si (111)/CoSi2/Si structureApplied Physics Letters, 1980
- Fabrication and numerical simulation of the permeable base transistorIEEE Transactions on Electron Devices, 1980
- The metal–gate transistorProceedings of the IEEE, 1964