Radiation effect characterization and test methods of single-chip and multi-chip stacked 16 Mbit DRAMs
- 1 December 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (6) , 2974-2981
- https://doi.org/10.1109/23.556894
Abstract
This paper presents radiation effects characterization performed by the NASA Goddard Space Flight Center (GSFC) on spaceflight candidate 16Mbit DRAMs. This includes heavy ion, proton, and Co60 irradiations on single-chip devices as well as proton irradiation of a stacked DRAM module. Lastly, a discussion of test methodology is undertaken.Keywords
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