Defect-induced Si/Ge intermixing on the Ge/Si(100) surface
- 15 April 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 59 (15) , 9764-9767
- https://doi.org/10.1103/physrevb.59.9764
Abstract
Si/Ge interfacial intermixing phenomena have often been observed in epitaxial Ge overlayer growth on Si surfaces. Yet, it is not clear if this Si/Ge intermixing originates from an energetically favorable configuration or from nonequilibrium growth conditions. Using the first-principles calculations we propose a model of defect-induced Si/Ge intermixing that is both energetically and kinetically favorable. We further discuss the intermixing phenomena at stepped Si surfaces.Keywords
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