Existence of a stable intermixing phase for monolayer Ge on Si(001)
- 1 June 1997
- journal article
- Published by Elsevier in Surface Science
- Vol. 381 (1) , L533-L539
- https://doi.org/10.1016/s0039-6028(97)00047-2
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Observation of the formation of a carbon-rich surface layer in siliconPhysical Review B, 1995
- Structures and reactions of missing dimers in epitaxial growth of Ge on Si(100)Physical Review B, 1995
- Interface intermixing influence on the electronic and optical properties of Si/Ge strained-layer superlatticesPhysical Review B, 1995
- Linet al. replyPhysical Review Letters, 1992
- Comment on ‘‘Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2×1)’’Physical Review Letters, 1992
- Comment on ‘‘Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2×1)’’Physical Review Letters, 1992
- Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2×1)Physical Review Letters, 1991
- Stress-induced layer-by-layer growth of Ge on Si(100)Physical Review B, 1991
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Heteroepitaxial growth of Ge films on the Si(100)-2×1 surfaceJournal of Applied Physics, 1985