Linet al. reply
- 20 July 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 69 (3) , 552-553
- https://doi.org/10.1103/physrevlett.69.552
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.69.552Keywords
This publication has 17 references indexed in Scilit:
- Comment on ‘‘Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2×1)’’Physical Review Letters, 1992
- Comment on ‘‘Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2×1)’’Physical Review Letters, 1992
- Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2×1)Physical Review Letters, 1991
- Crystal-field splitting and charge flow in the buckled-dimer reconstruction of Si(100)2×1Physical Review Letters, 1991
- Stress-induced layer-by-layer growth of Ge on Si(100)Physical Review B, 1991
- Microstructure and strain relief of Ge films grown layer by layer on Si(001)Physical Review B, 1990
- Equilibrium alloy properties by direct simulation: Oscillatory segregation at the Si-Ge(100) 2×1 surfacePhysical Review Letters, 1989
- Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scatteringApplied Physics Letters, 1989
- Structural properties of heteroepitaxial Ge films on a Si(100)-2×1 surfaceJournal of Applied Physics, 1988
- Heteroepitaxial growth of Ge films on the Si(100)-2×1 surfaceJournal of Applied Physics, 1985