Comment on ‘‘Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2×1)’’

This publication has 10 references indexed in Scilit:

• Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth
  Applied Physics Letters, 1991
• Dimer charge asymmetry determined by photoemission from epitaxial Ge on Si(100)-(2×1)
  Physical Review Letters, 1991
• Crystal-field splitting and charge flow in the buckled-dimer reconstruction of Si(100)2×1
  Physical Review Letters, 1991
• Surface-stress-induced order in SiGe alloy films
  Physical Review Letters, 1990
• Evidence of segregation in (100) strained Si1−xGex alloys grown at low temperature by molecular beam epitaxy
  Applied Physics Letters, 1990
• Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy
  Applied Physics Letters, 1989
• Equilibrium alloy properties by direct simulation: Oscillatory segregation at the Si-Ge(100) 2×1 surface
  Physical Review Letters, 1989
• Microscopic structure of theSiO2/Si interface
  Physical Review B, 1988
• Possibility of charge transfer between dimer atoms on Si(100)-(2×1)
  Physical Review B, 1988
• Geometry-DependentSi(2p)Surface Core-Level Excitations for Si(111) and Si(100) Surfaces
  Physical Review Letters, 1980