Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

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Abstract
ZrO 2 thin film has been studied as an alternative gate dielectric. It was deposited directly on a Si substrate by reactive sputtering. An equivalent oxide thickness of less than 11 Å with a leakage current of 1.9×10 −3 A/cm 2 at −1.5 V relative to the flat band voltage has been obtained. Well-behaved capacitance–voltage characteristics with an interface state density of less than 10 11 cm −2 eV −1 and no significant frequency dispersion have been achieved. Excellent reliability properties (e.g., low charge trapping rate, good time-dependent dielectric breakdown, low stress-induced leakage current, and high dielectric breakdown) have also been obtained.