Determination of the D 0/− level in amorphous Si,Ge:H(F) by time-of-flight charge collection
- 17 October 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (16) , 1542-1544
- https://doi.org/10.1063/1.99950
Abstract
We describe and demonstrate a new method for determining the density of states of the doubly occupied D0/− level in amorphous hydrogenated silicon and its alloys. The total charge collected during an electron time‐of‐flight measurement is determined as a function of T. T determines the energy E from which electrons are emitted during the measurement. Variation of T (and E) probes the local density of states. We present results for hydrogenated amorphous silicon before and after light soaking, and for amorphous silicon‐germanium (a‐Si,Ge:H,F) alloys.Keywords
This publication has 6 references indexed in Scilit:
- Gap State Distribution and Interface States in a-Si:H and a-SiGe:H by Modulated PhotocurrentMRS Proceedings, 1988
- Study of gap states in a-SiGe:H alloy system by below-gap modulated photocurrent spectroscopyJournal of Non-Crystalline Solids, 1987
- Steady state and transient transport in a-Si, Ge : H, F alloysJournal of Non-Crystalline Solids, 1987
- Transient photoconductivity studies of the light soaked state of hydrogenated amorphous siliconApplied Physics Letters, 1983
- Trapping parameters of dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Zum Mechanismus des lichtelektrischen Prim rstromes in isolierenden KristallenThe European Physical Journal A, 1932