1.17-μm highly strained GaInAs-GaAs quantum-well laser
- 1 August 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 11 (8) , 946-948
- https://doi.org/10.1109/68.775308
Abstract
Excellent lasing properties and temperature characteristic of a highly strained 1.17-μm GaInAs-GaAs double-quantum-well laser are reported. We show that a strained buffer layer, which is employed in the device, has no tradeoff on the device performance. For a 1500-μm-long laser with cleaved facets a threshold current density of 200 A/cm 2 is achieved. A transparency current density of 180 A/cm 2 is estimated for as cleaved devices. A record high characteristic temperature in this wavelength range of 150 K is achieved.Keywords
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