Charge collection spectroscopy
- 1 December 1993
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 40 (6) , 1880-1887
- https://doi.org/10.1109/23.273466
Abstract
Monitoring pulses measured between the power pins of a microelectronic device exposed to high LET ions yields important information on the SEU response of the circuit. Analysis is complicated for p-well CMOS devices by the possibility of competition between junctions, but the results suggest that charge collection measurements are still sufficient to determine SEU parameters accurately.This publication has 6 references indexed in Scilit:
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