Charge collection at large angles of incidence (CMOS SRAM)
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 39 (6) , 1622-1629
- https://doi.org/10.1109/23.211344
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Microbeam analysis of MOS circuitsIEEE Transactions on Nuclear Science, 1992
- Determination of SEU parameters of NMOS and CMOS SRAMsIEEE Transactions on Nuclear Science, 1991
- Modeling charge collection and single event upsets in microelectronicsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Comparison of the charge collecting properties of junctions and the SEU response of microelectronic circuitsInternational Journal of Radiation Applications and Instrumentation. Part D. Nuclear Tracks and Radiation Measurements, 1991
- Suggested Single Event Upset Figure of MeritIEEE Transactions on Nuclear Science, 1983