About the sublimation of Si surfaces vicinal of {111}
- 1 July 1993
- journal article
- Published by Elsevier in Surface Science
- Vol. 291 (1-2) , L745-L749
- https://doi.org/10.1016/0039-6028(93)91470-a
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Observation of step formation on vicinal Si(111) surfaces by atomic force microscopyUltramicroscopy, 1992
- Real-time observation of step motion on Si(111) surface by scanning tunneling microscopyUltramicroscopy, 1992
- Systematic change in surface structures on Si(111) clean surfaces with temperaturePhilosophical Magazine Letters, 1992
- Kinetic smoothing and roughening of a step with surface diffusionPhysical Review Letters, 1992
- Electromigration Induced Step Bunching on Si Surfaces – How Does it Depend on the Temperature and Heating Current Direction?Japanese Journal of Applied Physics, 1991
- DC-Resistive-Heating-Induced Step Bunching on Vicinal Si (111)Japanese Journal of Applied Physics, 1990
- Reflection electron microscopy study of structural transformations on a clean silicon surface in sublimation, phase transition and homoepitaxySurface Science, 1990
- Determination of the Si(111)“ 1×1” structure at high temperature by reflection high-energy electron diffractionSurface Science, 1989
- The Kinetics of Silicon Deposition on Silicon by Pyrolysis of SilaneJournal of the Electrochemical Society, 1974
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951