Electron irradiation assisted annealing of boron and phosphorus implanted silicon layers

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Abstract
Radíatíon annealing due to a 1.0 MeV election beam of intensity 25 μA/cm2 was studied in silicon samples implanted with phosphorus and boron ions and annealed at 350–500°C. A significant annealing enhancement as compared to thermal annealing has been observed in phosphorus-implanted samples. In boron-implanted samples, a fast initial rise of electrical activity is followed by a continuous decrease of carrier concentration. The results are interpreted in terms of two competing processes: electron irradiation induced removal of post-implantation defects and introduction of simple electrically active defects.