The lower yield point of InP and GaAs
- 16 May 1987
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 101 (1) , K13-K18
- https://doi.org/10.1002/pssa.2211010134
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Hall effect of plastically deformed GaAsPhysica Status Solidi (a), 1986
- Measurements of the critical resolved shear stress for indium-doped and undoped GaAs single crystalsApplied Physics Letters, 1986
- Thermal Activation of Plastic Deformation of Undoped GaAs between 528 and 813 KPhysica Status Solidi (a), 1986
- Temperature dependence for the onset of plastic yield in undoped and indium-doped GaAsApplied Physics Letters, 1986
- Deformation behaviour and dislocation formation in undoped and doped (Zn, S)InP crystalsJournal of Crystal Growth, 1985
- Effect of temperature and sulfur doping on the plastic deformation of InP single crystalsMaterials Science and Engineering, 1983
- Thermal analysis of LEC InP growthJournal of Crystal Growth, 1983
- Yield point and dislocation mobility in silicon and germaniumJournal of Applied Physics, 1983
- Dislocation Velocities in Indium PhosphideJapanese Journal of Applied Physics, 1981
- Dislocations and Plastic Flow in the Diamond StructurePublished by Elsevier ,1969