Transport integrals and their application to magneto-microwave transmission inn-type germanium and silicon

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Abstract
This paper presents high-frequency transport integrals involved in the magnetoconductivity tensor of the conduction bands of germanium and silicon. The transport integrals have been defined and studied for a mixture of scatterings due to acoustical phonons, optical phonons, and ionized impurities which have appreciable contribution to the conduction phenomenon in Ge and Si at room temperature. The applications of these integrals to the magneto-microwave properties in Ge ans Si are presented and a more accurate analysis of the experimental results on Faraday rotation and magneto-Kerr effect of other workers is attempted. Finally, experimental results on magneto-transmission are presented and analyzed with the help of these integrals in order to determine the relative abundance of impurity scattering and optical-phonon scattering to the acoustic phonon scattering.