The Microwave Magneto-Kerr Effect in Silicon and Germanium. II. Determination of Relaxation Time and Effective Mass

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Abstract
This paper analyzes microwave (8.6 GHz) measurements of complex conductivity and Hall factor in order to investigate the temperature dependence of the momentum relaxation time and effective mass of majority carriers in near‐intrinsic n‐ and p‐type Si and Ge. The analysis uses scattering models which include ionized impurity scattering, intravalley acoustic‐ and optical‐mode scattering, and intervalley scattering. For n‐ and p‐type Ge and n‐type Si, the conductivity effective mass is found to be virtually independent of temperature in the range 77° < T < 160°K and to agree favorably with results calculated from microwave cyclotron resonance measurements at 4°K. Because of inadequancy of the model for p‐type silicon, the measurements do not yield an unambiguous value of the effective mass but do indicate constancy with temperature.