High energy AlxGa1−xAs (0⩽x⩽0.1) quantum-well heterostructure laser operation
- 15 August 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (4) , 317-319
- https://doi.org/10.1063/1.93520
Abstract
Besides high pressure or bulk crystal composition change, a size‐determined direct‐indirect transition can be obtained in an AlxGa1−xAs (0⩽x⩽0.1) quantum‐well heterostructure (QWH), in fact, at higher energy (E∼2.05 eV) than in bulk AlxGa1−xAs (∼1.98 eV). Laser operation is demonstrated at 6700–6500 Å on a QWH grown by metalorganic chemical vapor deposition (MOCVD).Keywords
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