Gap-states measurement of chemically vapor-deposited amorphous silicon: High-frequency capacitance-voltage method
- 1 February 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2) , 1013-1017
- https://doi.org/10.1063/1.330510
Abstract
A high-frequency (1 MHz) capacitance-voltage method is proposed to measure the gap-state density in a chemically vapor-deposited (CVD) amorphous (a-)Si. The density is derived from the analysis of high-frequency capacitance-voltage characteristics of a CVD a-Si and n-type crystalline (c-)Si junction. The density near the Fermi level in the CVD a-Si deposited at 550 °C is obtained of the order of 1017∼1018 cm−3 eV−1. Further, the energy band diagram of CVD a-Si and c-Si junction is described, and the electron affinity of CVD a-Si is derived to be less than 3.75 eV.This publication has 11 references indexed in Scilit:
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