Electron transport and ionization in silicon at high fields
- 31 January 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (1) , 291-295
- https://doi.org/10.1016/0038-1101(78)90150-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Interrelationship between the saturated drift velocity and impact ionization of electrons in siliconApplied Physics Letters, 1973
- Drift velocity of electrons and holes and associated anisotropic effects in siliconJournal of Physics and Chemistry of Solids, 1971
- Ultrasonic Amplification in CdSPhysical Review Letters, 1961
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961