Regular step arrays on silicon
- 23 February 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (8) , 948-950
- https://doi.org/10.1063/1.120882
Abstract
Highly regular arrays of steps are produced on vicinal Si(111)7×7. The step edges are atomically straight for up to 2×104 lattice sites. The terraces are single domain, which produces a minimum kink width of 2.3 nm (half a 7×7 unit cell) and thus a high barrier for creating kinks. Criteria for obtaining optimum step arrays are established, such as the miscut [≈1° towards (1̄1̄2)] and an annealing sequence which passes through step bunching regions quickly.Keywords
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