Interfacial Phenomena in Vacuum-Deposited Metal Films on Silicon Substrate
- 1 December 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (12A) , L779-780
- https://doi.org/10.1143/jjap.21.l779
Abstract
Pure nickel and gold thin films were vacuum-deposited on (111) silicon single crystals. When Ni/Au/Si samples were heated to about 550°C in vacuum, crystallites of NiSi2 were formed on the silicon substrates. The silicon substrate doped with antimony showed stacking faults, while the silicon substrate doped with phosphorus did not show stacking faults.Keywords
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