Measurement of InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction band offsets by x-ray photoemission spectroscopy

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Abstract
X-ray photoemission spectroscopy (XPS) has been used to measure the valence-band offset ΔEv for the lattice-matched InP/ In0.53Ga0.47As and In0.53Ga0.47As/ In0.52Al0.48As heterojunction interfaces. The heterojunctions were formed by molecular-beam epitaxy. We obtain values of ΔEv (InP/In0.53Ga0.47As) =0.34 eV (ΔEc/ ΔEv=43/57) and ΔEv (In0.53Ga0.47As/ In0.52Al0.48As) =0.22 eV (ΔEc/ ΔEv =68/32) for the respective interfaces. By combining these measurements with available XPS ΔEv (InP/ In0.52Al0.48As) data we find that band offset transitivity is satisfied. Accordingly, the band offsets for heterojunction pairs formed from InP, In0.53Ga0.47As, and In0.52Al0.48As are not influenced by interface specific effects.