“In situ” measurements of the transient photoconductivity in a-Si:H
- 31 October 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 56 (1) , 127-129
- https://doi.org/10.1016/0038-1098(85)90549-6
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Charge carrier dynamics in a-Si:HSolid State Communications, 1985
- Influence of light-induced defects in hydrogenated amorphous silicon on charge carrier dynamicsApplied Physics Letters, 1985
- Effect of site disorder on the optical absorption edge of a-Si:HxJournal of Non-Crystalline Solids, 1983
- Direct spectroscopic determination of the distribution of occupied gap states in a-Si:HJournal of Non-Crystalline Solids, 1983
- Thickness dependence of electrical and optical properties and E.S.R. in undoped a-Si: HPhilosophical Magazine Part B, 1982
- Band-Tail Absorption in Hydrogenated Amorphous SiliconPhysical Review Letters, 1980