Influence of light-induced defects in hydrogenated amorphous silicon on charge carrier dynamics
- 1 January 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (1) , 69-70
- https://doi.org/10.1063/1.95856
Abstract
Charge carrier decay processes in hydrogenated amorphous silicon after extended illumination are studied by the time-resolved microwave conductivity method. It is shown that creation of metastable defects depends on illumination time. Two different defects can be distinguished: one which decreases the charge carrier lifetime in the bulk, whereas the other one increases the subband gap absorption at the surface.Keywords
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