Physical characterization of electron trapping in Unibond(R) oxides

This publication has 13 references indexed in Scilit:

• Charge trapping in SIMOX and UNIBOND® oxides
  Microelectronic Engineering, 1997
• Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures
  Journal of Applied Physics, 1995
• Evidence of negative charge trapping in high temperature annealed thermal oxide
  IEEE Transactions on Nuclear Science, 1994
• Effect of high temperature processing of Si/SiO2/Si structures on their response to x-ray irradiation
  Applied Physics Letters, 1993
• New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)
  IEEE Transactions on Nuclear Science, 1992
• Comparative study of radiation-induced electrical and spin active defects in buried SiO2 layers
  Journal of Applied Physics, 1992
• Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers
  IEEE Electron Device Letters, 1992
• Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices
  IEEE Transactions on Nuclear Science, 1991
• An Evaluation of Low-Energy X-Ray and Cobalt-60 Irradiations of MOS Transistors
  IEEE Transactions on Nuclear Science, 1987
• Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors
  Applied Physics Letters, 1986