Evidence of negative charge trapping in high temperature annealed thermal oxide
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (3) , 473-478
- https://doi.org/10.1109/23.299787
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Electron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxidesIEEE Transactions on Nuclear Science, 1992
- Radiation-induced E′ centers in H2-annealed oxide filmsApplied Physics Letters, 1992
- Electric field dependent paramagnetic defect creation in single-step high dose oxygen implanted SIMOX filmsMaterials Science and Engineering: B, 1992
- Electron spin resonance study of E' trapping centers in SIMOX buried oxidesIEEE Transactions on Nuclear Science, 1991
- Ultraviolet radiation induced defect creation in buried SiO2 layersApplied Physics Letters, 1991
- Donor/acceptor nature of radiation-induced interface trapsIEEE Transactions on Nuclear Science, 1988
- Kinetics of high-temperature thermal decomposition of SiO2 on Si(100)Journal of Vacuum Science & Technology A, 1987
- Defect Microchemistry at the SiO2/Si InterfaceMRS Proceedings, 1987
- High-Temperature SiDecomposition at the Si/Si InterfacePhysical Review Letters, 1985
- Process Optimization of Radiation-Hardened CMOS Integrated CircuitsIEEE Transactions on Nuclear Science, 1975