Defect Microchemistry at the SiO2/Si Interface
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Hole trapping in SiO2 films annealed in low-pressure oxygen atmosphereJournal of Applied Physics, 1987
- Kinetics of high-temperature thermal decomposition of SiO2 on Si(100)Journal of Vacuum Science & Technology A, 1987
- Defect Microchemistry at the Si/Si InterfacePhysical Review Letters, 1987
- Role of oxygen in defect-related breakdown in thin SiO2 films on Si (100)Journal of Applied Physics, 1987
- Defect formation in thermal SiO2 by high-temperature annealingApplied Physics Letters, 1986
- Interface traps and P b centers in oxidized (100) silicon wafersApplied Physics Letters, 1986
- High-Temperature SiDecomposition at the Si/Si InterfacePhysical Review Letters, 1985
- High temperature annealing behavior of electron traps in thermal SiO2Solid-State Electronics, 1984
- Probing the transition layer at the SiO2-Si interface using core level photoemissionApplied Physics Letters, 1984