Electrophotographic studies of glow-discharge amorphous silicon
- 1 June 1981
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 43 (6) , 1079-1089
- https://doi.org/10.1080/01418638108222575
Abstract
Photoelectronic properties of glow-discharge amorphous silicon (a-Si) relevant to its use as a photoreceptor for electrophotography are described on the basis of the measurements of the xerographic discharge characteristics as well as conventional photoconductivity under various experimental conditions: impurity doping, temperature, and light intensity. A hole μτ product of 2–6 × 10−8 cm2/V at electric fields of 103–105 V/cm for intrinsic a-Si: H are obtained.Keywords
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