Damage removal following low energy ion implantation
- 1 January 1988
- journal article
- Published by Cambridge University Press (CUP) in Proceedings, annual meeting, Electron Microscopy Society of America
- Vol. 46, 906-907
- https://doi.org/10.1017/s0424820100106594
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Elimination of end-of-range and mask edge lateral damage in Ge+ preamorphized, B+ implanted SiApplied Physics Letters, 1986
- Ge+ Preamorphization of Si: Effects of Dose and Very Low Temperature Thermal Treatment on Extended Defect Formation During Subsequent SpeMRS Proceedings, 1985
- Germanium Implantation into Silicon: An Alternate Pre‐Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction FormationJournal of the Electrochemical Society, 1984
- Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+Journal of Applied Physics, 1979