Ge+ Preamorphization of Si: Effects of Dose and Very Low Temperature Thermal Treatment on Extended Defect Formation During Subsequent Spe
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Germanium Implantation into Silicon: An Alternate Pre‐Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction FormationJournal of the Electrochemical Society, 1984
- Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+Journal of Applied Physics, 1979
- Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal SiPhysics Letters A, 1975