Extremely strong and sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs, AlGaAs and AlGaAs/GaAs single quantum wells
- 1 September 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (9) , 1527-1530
- https://doi.org/10.1007/bf02655394
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAsApplied Physics Letters, 1995
- Nitridation of GaAs surfaces using nitrogen through a hot tungsten filamentApplied Physics Letters, 1995
- Atomic-scale composition fluctuations in III-V semiconductor alloysPhysical Review B, 1993
- Photoluminescence of nitrogen-doped VPE GaAsSolid State Communications, 1985
- A model for some defect-related bound exciton lines in the photoluminescence spectrum of GaAs layers grown by molecular beam epitaxyJournal of Physics C: Solid State Physics, 1984
- Low temperature photoluminescence of lightly Si-doped and undoped MBE GaAsJournal of Electronic Materials, 1982
- Electronic states associated with the substitutional nitrogen impurity in GaPxAs1-xJournal of Physics C: Solid State Physics, 1979
- A new luminescence line due to nitrogen implanted into AlxGa1−xAs (x=0.37)Applied Physics Letters, 1975
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966