A new luminescence line due to nitrogen implanted into AlxGa1−xAs (x=0.37)
- 1 October 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (7) , 392-394
- https://doi.org/10.1063/1.88505
Abstract
Optical behavior of isoelectronic impurities in AlxGa1−xAs (x=0.37) is investigated. Photoluminescence of the samples implanted with N was measured at 2 °K. A new luminescence line is observed at an energy which is 90 meV below the edge emission peak. The integrated intensity of the N‐implanted sample is about five times larger than that of an unimplanted and annealed sample. This is thought to be due to the bound states produced by the N atoms which replace the As atoms.Keywords
This publication has 6 references indexed in Scilit:
- Annealing Temperature Dependence of Photoluminescence in N-Implanted GaAs1-xPx(x=0.36)Japanese Journal of Applied Physics, 1974
- Isoelectronic traps in semiconductors (experimental)Journal of Luminescence, 1973
- Spontaneous and stimulated photoluminescence on nitrogen A-line and NN-pair line transitions in GaAs1−x Px : NJournal of Applied Physics, 1972
- Photoluminescence of AlxGa1−xAsJournal of Applied Physics, 1972
- Binding to Isoelectronic Impurities in SemiconductorsPhysical Review Letters, 1972
- The fundamental absorption edge of AlAs and AlPSolid State Communications, 1970