Thickness study of thermally oxidized and anonized thin Al2O3 films
- 1 March 1969
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 3 (3) , 183-188
- https://doi.org/10.1016/0040-6090(69)90028-5
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Thickness fluctuations and electric field penetration in thin metal-insulator-metal structuresSolid-State Electronics, 1968
- Anodic growth mechanism of oxides with low ionic conductivitySolid State Communications, 1968
- Tunnel and Sehottky Current in Dielectric Thin Films Considering Film Thickness FluctuationsPhysica Status Solidi (b), 1967
- Influence of non-uniform thickness of dielectric layers on capacitance and tunnel currentsSolid-State Electronics, 1966
- Effect of Insulating-Film-Thickness Nonuniformity on Tunnel CharacteristicsJournal of Applied Physics, 1963
- Natural and Thermally Formed Oxide Films on AluminumJournal of the Electrochemical Society, 1956