Electron-beam-induced decomposition and oxidation of thin CaF2-layers on Si(111) Studied by auger electron spectroscopy
- 2 January 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 225 (3) , 292-300
- https://doi.org/10.1016/0039-6028(90)90450-m
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Thermal mismatch biased rhombohedral structure of strained epitaxial CaF2 films on Si(111)Physica Status Solidi (a), 1988
- In-situ observation of defect formation in CaF2(111) surfaces induced by low energy electron bombardmentSurface Science, 1987
- Auger electron spectroscopy study of the epitaxial growth mode of (Ca, Sr)F2 on GaAs(100)Surface Science, 1986
- Electronic and chemical analysis of fluoride interface structures at subnanometer spatial resolutionJournal of Vacuum Science & Technology B, 1986
- Nanometer scale electron beam lithography in inorganic materialsApplied Physics Letters, 1984
- High resolution electron beam lithography on CaF2Applied Physics Letters, 1984
- Anion voidage and the void superlattice in electron irradiated Caf2Radiation Effects, 1983
- Thin-film CaF2 inorganic electron resist and optical-read storage mediumApplied Physics Letters, 1982
- Electron-beam-induced decomposition of ion bombarded calcium fluoride surfacesJournal of Applied Physics, 1981
- Production of F and F‐Aggregate Centres in CaF2 and SrF2 by IrradiationPhysica Status Solidi (b), 1973