Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100)
- 9 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 29-32
- https://doi.org/10.1016/s0167-9317(97)00010-5
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- High resolution ion scattering study of silicon oxynitridationApplied Physics Letters, 1996
- Rapid thermal N2O oxynitride on Si(100)Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Effects of chemical composition on the electrical properties of NO-nitrided SiO2Applied Physics Letters, 1995
- Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughnessApplied Physics Letters, 1994
- Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): The role of nitric oxide (NO)Journal of Applied Physics, 1994
- Role of interfacial nitrogen in improving thin silicon oxides grown in N2OApplied Physics Letters, 1993
- Highly Reliable Thin Nitrided SiO2 Films Formed by Rapid Thermal Processing in an N2O AmbientJapanese Journal of Applied Physics, 1990
- Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2OApplied Physics Letters, 1990
- Thermodynamics of the Si‐N‐O System and Kinetic Modeling of Oxidation of Si3 N 4Journal of the Electrochemical Society, 1989
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965