Extremely high hole concentration in GaAs by dual Mg/As implants
- 15 April 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (8) , 2783-2786
- https://doi.org/10.1063/1.341173
Abstract
The activation of magnesium implants in GaAs has been found to increase drastically with coimplantation of arsenic and to depend strongly on the As implantation parameters. p-type carrier concentrations as high as 4×1020 cm−3 have been achieved for 5×1015 cm−2, 190-keV Mg+/1×1016 cm−2, 540-keV As2+ implants. The role of the As has been shown to block the Mg diffusion during the silicon-nitride-capped 5-min anneals at 750 °C.This publication has 13 references indexed in Scilit:
- High doping level by rapid thermal annealing of Mg-implanted GaAs/GaAlAs for heterojunction bipolar transistorsIEEE Electron Device Letters, 1987
- Improved activation of Mg+ and As+ dual implants in GaAs by capless rapid thermal annealingApplied Physics Letters, 1987
- Formation of p-type GaAs layers using Mg+ implantation and capless rapid thermal annealingApplied Physics Letters, 1986
- Rapid thermal annealing of Mg++As+ dual implants in GaAsApplied Physics Letters, 1986
- Shallow beryllium implantation in GaAs annealed by rapid thermal annealingApplied Physics Letters, 1985
- Rapid thermal annealing of Be, Si, and Zn implanted GaAs using an ultrahigh power argon arc lampApplied Physics Letters, 1983
- The growth of Magnesium-doped GaAs by the Om-Vpe processJournal of Electronic Materials, 1983
- Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistorsIEEE Electron Device Letters, 1983
- Correlation of electrical carrier and atomic profiles of Mg implants in GaAsJournal of Applied Physics, 1982
- Applications of Electrochemical Methods for Semiconductor Characterization: I . Highly Reproducible Carrier Concentration Profiling of VPE “Hi‐Lo”Journal of the Electrochemical Society, 1980