Improved activation of Mg+ and As+ dual implants in GaAs by capless rapid thermal annealing
- 23 February 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (8) , 448-450
- https://doi.org/10.1063/1.98170
Abstract
The activation of high dose Mg+ implants (1×1015 cm−2, 100 keV) in GaAs using capless rapid thermal annealing has been improved by the co‐implantation of As+. This technique reduces the outdiffusion of the implanted Mg, which can adversely affect the activation of shallow, high dose implants. Compared with an activation of 18% for an implant of Mg+ only, the co‐implantation of As+ has increased the activation to as much as 61% with concomitant sheet resistance of 136 Ω/⧠. The placement of the As+ implant with respect to the position of the Mg+ profile has been determined to play a role in the activation efficiency. This technique has been applied to the formation of thick p+ regions with high surface carrier concentrations, which has important applications in device fabrication for reduction of contact resistances.Keywords
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