Rapid thermal annealing of Mg++As+ dual implants in GaAs
- 26 May 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (21) , 1467-1469
- https://doi.org/10.1063/1.96891
Abstract
Mg+ and As+ ions were implanted into GaAs to study the effects of dual implantation on the electrical properties. Increased electrical activity and significantly less redistribution of the magnesium were observed for the dual implants compared with the single implants. A maximum activity of 40% with a sheet resistivity as low as 185 Ω/⧠ was obtained for the dual implant compared to an activity of 27% with a resistivity of 250 Ω/⧠ for the single implant at a dose of 1015 cm−2. A peak hole concentration approaching 4×1019 cm−3 was recorded for the dual implant annealed at 900 °C for 30 s.Keywords
This publication has 10 references indexed in Scilit:
- Incoherent light annealing of Mg implanted GaAsRadiation Effects, 1985
- Electron beam annealing of zinc implanted GaAs to control profile broadeningElectronics Letters, 1984
- Enhanced activation of Zn-implanted GaAsApplied Physics Letters, 1984
- Zn-Implanted GaAs with minimized annealing redistributionIEEE Electron Device Letters, 1983
- Rapid thermal annealing of Be, Si, and Zn implanted GaAs using an ultrahigh power argon arc lampApplied Physics Letters, 1983
- Formation of p+-layer in GaAs by dual implantation of Zn and AsJapanese Journal of Applied Physics, 1983
- New projected range algorithm as derived from transport equationsThe European Physical Journal A, 1982
- Calculation of projected ranges — analytical solutions and a simple general algorithmNuclear Instruments and Methods, 1981
- Electrical measurements and optical activation studies in Mg-implanted GaAsJournal of Applied Physics, 1979
- Electrical profiling and optical activation studies of Be-implanted GaAsJournal of Applied Physics, 1977