Formation of p+-layer in GaAs by dual implantation of Zn and As
- 1 June 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (6A) , L373-375
- https://doi.org/10.1143/jjap.22.l373
Abstract
Dual implantation of Zn and As in GaAs resulted in a p +-layer superior to that formed by the implantation of Zn only. Dual implantation improved the electrical activity of Zn significantly. The double-peak often observed in the hole concentration profile of the sample by the implantation of Zn only was eliminated by equal dose co-implantation of As, in which the hole concentration profile was Gaussian-like with a peak at the projected range (R p ) of Zn. The equal dose co-implantation of As also resulted in lower sheet resistance, suggesting that stoichiometry in the implanted layer is essential for activating implanted impurities in GaAs effectively.Keywords
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