Effect of circuit parameters and topology on intermodulation in MESFET circuits
- 30 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 255-258
- https://doi.org/10.1109/gaas.1993.394457
Abstract
Third-order intermodulation intercept is a very important criterion in communication circuits and the authors present a preliminary investigation of the mechanisms responsible. It is shown that interaction of the intrinsic MESFET second-order nonlinearity with linear circuit and parasitic components can cause significant distortion. MESFET output conductance is shown to also cause an interaction effect. Hence, intercept points quite different from those predicted by standard device characterization techniques can be obtained. Some regions of enhanced performance have been identified. Circuit topology also plays a key role in determining distortion. Some experimental results are given.> Author(s) Webster, D.R. Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK Parker, A.E. ; Haigh, D.G. ; Scott, J.B.Keywords
This publication has 6 references indexed in Scilit:
- Improved MESFET characterization for analog circuit design and analysisPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Mechanisms determining third order intermodulation distortion in AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Microwave Theory and Techniques, 1992
- A wide-band ultralinear amplifier from 3 to 300 MHzIEEE Journal of Solid-State Circuits, 1974
- An analysis of distortion in bipolar transistors using integral charge control model and Volterra seriesIEEE Transactions on Circuit Theory, 1973
- Cross modulation and intermodulation in amplifiers at high frequenciesIEEE Journal of Solid-State Circuits, 1972
- Transistor Distortion Analysis Using Volterra Series RepresentationBell System Technical Journal, 1967