A study of the surface passivation on GaAs and In/sub 0.53/Ga/sub 0.47/As Schottky-barrier photodiodes using SiO/sub 2/, Si/sub 3/N/sub 4/ and polyimide
- 1 October 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (10) , 1695-1696
- https://doi.org/10.1109/16.7375
Abstract
No abstract availableKeywords
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